Abstract: The single-event leakage current (SELC) mechanism of the silicon carbide (SiC) junction barrier Schottky (JBS) diode is thoroughly investigated in this work. A comprehensive physical model ...
This ETH Zurich logo consists of 2,800 nano light-emitting diodes and, at a height of 20 micrometers, matches the size of a human cell.Amanda Paganini / ETH Zurich Swiss researchers have built organic ...
Abstract: Innovation in GaN semiconductors has improved aspect of power capability, switching speed and size. However, their short-circuit withstand time is low compared to SiC and IGBT switches. It ...
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