DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors—today announced availability of its 1200 ...
Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...
Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer ...
The success of the team – a partnership between researchers at Peking University, the Songshan Lake Materials Laboratory in ...
Gallium-nitride power transistors occupy a unique performance niche. Here is why, along with five GaN devices to consider for your next design. 1. A graph from “Comparative Study of Optimally Designed ...
Built on novel GaN-on-GaN technology, onsemi’s vertical GaN architecture sets a new benchmark for power density, efficiency and ruggedness Scottsdale, Ariz, Oct. 30, 2025 (GLOBE NEWSWIRE) — Summary — ...
Silicon carbide (SiC) and gallium nitride (GaN), widely considered the future of energy conversion, were the prominent highlight of APEC 2023 in Orlando, Florida. According to the figures provided in ...
Gallium nitride has become the de facto material in third-generation semiconductors. However, making GaN epi wafers in the quality you need and the thermal resistance you desire are challenges that ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback