Use left and right arrow keys to seek audio. SK hynix is reportedly using the EUV process in the development of its next-gen DRAM, with its 1c DRAM (6th-generation 10nm-class) for which transitional ...

Quick ReadSMH blends Micron with equipment makers for broad memory exposure, while DRAM concentrates Samsung, SK Hynix, and ...

A technical paper titled “DRAM Translation Layer: Software-Transparent DRAM Power Savings for Disaggregated Memory” was published by researchers at Seoul National University. Wenjing Jin, Wonsuk Jang, ...

Samsung has come out of the gate strong in 2024 by announcing it's developed a 12-layer version of the most cutting-edge high-bandwidth memory (HBM) available today, HBM3e. The development will move ...

The first generation of AI accelerators built around high bandwidth memory reshaped the data center. Now the next wave, built on 16-layer HBM4 stacks, is moving from engineering samples into volume ...

Samsung is continuing to revamp its memory offerings in a response to the shift to AI workloads, introducing products such as HBM3E Shinebolt, LPDDR5X DRAM, and LPDDR5X CAMM2. According to the company ...

Technology related to the next-generation artificial intelligence (AI) semiconductor "Z-Angle Memory" (ZAM), being developed by U.S. Intel and SAIMEMORY, a subsidiary of Japan's SoftBank, has advanced ...

The FINANCIAL — Sony Corporation on February 7 announced the development of the industry’s first 3-layer stacked CMOS image sensor with DRAM for smartphones. The new image sensor consists of a DRAM ...

Further pushing the bounds of what is possible in smartphone photography, Sony has introduced a new architecture that incorporates a layer of on-sensor DRAM. That allows for much higher performance ...