Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a ...

Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for ...

COLORADO SPRINGS, Colo.--(BUSINESS WIRE)--Frontgrade™ Technologies, a leading provider of high-reliability electronic solutions for space and national security missions, today announced the expansions ...

NEC has developed a GaAs-based power amplifier that achieves what it believes is the world’s highest output power of 10 mW in the 150-GHz band. Built with mass-producible GaAs technology, the device ...

Engineers often perceive RF-low-noise-amplifier design as a difficult task. Obtaining a low-noise figure with high stable gain can be challenging—even intimidating. However, with the recent evolution ...

The CMX90A705 is a two-stage gallium-nitride-on-silicon carbide (GaN-on-SiC) linear PA that delivers +37.4 dBm (5.5 W) of saturated power over a frequency range of 27.5 to 31 GHz, with 16.5 dB of ...

ATHENS, Greece, March 03, 2026 (GLOBE NEWSWIRE) -- Circuits Integrated Hellas (CIH), a pioneering innovator in advanced satellite communication (Satcom) technology, today announced the CI-ONE family ...

A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation (NOC) has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit ...