Superior output and transmission properties are demonstrated in tellurium oxide-based amorphous p-type thin-film transistors (Se:Te = 1:4) processed with an optimal selenium alloying ratio. The ...
Unfortunately, this book can't be printed from the OpenBook. If you need to print pages from this book, we recommend downloading it as a PDF. Visit NAP.edu/10766 to get more information about this ...
(Nanowerk News) Professor Yong-Young Noh from the Department of Chemical Engineering at Pohang University of Science and Technology (POSTECH), along with Dr. Ao Liu and Dr. Huihui Zhu, postdoctoral ...
A novel method that employs palladium to inject hydrogen into the deeply buried oxide-metal electrode contacts of amorphous oxide semiconductors (AOSs) storage devices, which reduces contact ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results